sup/SUB70N04-10 vishay siliconix document number: 70783 s-05110?rev. d, 10-dec-01 www.vishay.com 2-1 n-channel 40-v (d-s), 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) 0.010 @ v gs = 10 v 70 40 0.014 @ v gs = 4.5 v 58 d g s n-channel mosfet drain connected to tab to-220ab top view gds sup70n04-10 SUB70N04-10 to-263 s g top view d
parameter symbol limit unit drain-source voltage v ds 40 gate-source voltage v gs 20 v t c = 25 c 70 continuous drain current (t j = 175 c) t c = 100 c i d 47 pulsed drain current i dm 140 a avalanche current i ar 60 repetitive avalanche energy a l = 0.1 mh e ar 180 mj power dissipation t c = 25 c p d 107 b w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol typical maximum unit pcb mount (to-263) c 35 40 junction-to-ambient free air (to-220) r thja 45 50 c/w junction-to-case r thjc 1.2 1.4 c/w notes: a. duty cycle 1%. b. see soa curve for voltage derating. c. surface mounted on 1? fr4 board.
sup/SUB70N04-10 vishay siliconix www.vishay.com 2-2 document number: 70783 s-05110 ? rev. d, 10-dec-01 parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 40 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 40 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 70 a v gs = 10 v, i d = 30 a 0.008 0.010 v gs = 10 v, i d = 30 a, t j = 125 c 0.014 0.017 v gs = 10 v, i d = 30 a, t j = 175 c 0.0175 0.022 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 20 a 0.011 0.014 v gs = 4.5 v, i d = 20 a, t j = 125 c 0.019 0.024 v gs = 4.5 v, i d = 20 a, t j = 175 c 0.024 0.031 forward transconductance a g fs v ds = 15 v, i d = 30 a 20 57 s dynamic b input capacitance c iss 2700 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 600 pf reversen transfer capacitance c rss 160 total gate charge c q g 50 100 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 70 a 10 nc gate-drain charge c q gd ds gs d 9 turn-on delay time c t d(on) 14 30 rise time c t r v dd = 15 v, r l = 0.2 12 30 turn-off delay time c t d(off) v dd = 15 v, r l = 0.2 i d 70 a, v gen = 10 v, r g = 2.5 58 100 ns fall time c t f d gen g 30 60 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 70 pulsed current i sm 140 a forward voltage a v sd i f = 70 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr i f = 70 a, di/dt = 100 a/ s 50 100 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/SUB70N04-10 vishay siliconix document number: 70783 s-05110 ? rev. d, 10-dec-01 www.vishay.com 2-3 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ? ) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 0 30 60 90 120 150 0246810 0 800 1600 2400 3200 4000 0 8 16 24 32 40 0 2 4 6 8 10 0 1020304050 0 20 40 60 80 100 0 20 40 60 80 100 120 0.000 0.006 0.012 0.018 0.024 0.030 0 20 40 60 80 100 120 0 30 60 90 120 150 01234567 25 c 125 c 3 v t c = ? 55 c v gs = 15 v i d = 70 a v gs = 10 thru 6 v 5 v v gs = 10 v c iss c oss c rss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v
sup/SUB70N04-10 vishay siliconix www.vishay.com 2-4 document number: 70783 s-05110 ? rev. d, 10-dec-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ? ) ? source current (a) i s 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 100 10 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 1
t c = 25 c single pulse safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 200 10 0.1 1 10 50 limited by r ds(on) 0.1 100 1 ms 10 ms 100 ms dc 10 s 100 s 1 0 20 40 60 80 0 25 50 75 100 125 150 175 maximum drain current vs. ambiemt t emperature t a ? ambient temperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
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